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IRF540N LC260WX2 MUR1020 15E07SLP C8051F3 3025YSGC XF001 255004
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  Datasheet File OCR Text:
 SMD Type
Silicon PNP Epitaxial Planar Type 2SB710
Transistors IC
SOT-23
Unit: mm
Large collector current IC.
+0.1 2.4-0.1
Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
Features
+0.1 2.9-0.1 +0.1 0.4-0.1
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -30 -25 -5 -0.5 -1 200 150 -55 to +150 Unit V V V A A mW
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = -10 iA, IE = 0 IC = -10 mA, IB = 0 IE = -10 iA, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA 85 -0.35 -1.1 200 6 15 Min -30 -25 -5 -0.1 340 -0.6 -1.5 V V MHz pF Typ Max Unit V V V iA
VCE(sat) IC = -300 mA, IB = -30 mA VBE(sat) IC = -300 mA, IB = -30 mA fT Cob VCB = -10 V, IE = 50 mA , f = 200 MHz VCB = -10V , IE = 0 , f = 1.0MHz
hFE Classification
Marking hFE CQ 85 170 CR 120 240 CS 170 340
+0.1 0.38-0.1
0-0.1
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